Karthikeyan, S, Hill, AE, Pilkington, RD, Cowpe, JS, Hisek, J and Bagnall, DM 2011, 'Single step deposition method for nearly stoichiometric CuInSe2 thin films' , Thin Solid Films, 519 (10) , pp. 3107-3112.

Preview

PDF - Accepted Version Download (5MB) | Preview

Abstract

This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As–grown thin films consisted of pin-hole free, densely packed grains. X–ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe2. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p–type. The physical and structural properties of these films were analyzed using x-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.

Available Versions of this Item

• Single step deposition method for nearly stoichiometric CuInSe2 thin films. (deposited 12 Jan 2011 10:30)
  • Single step deposition method for nearly stoichiometric CuInSe2 thin films. (deposited 22 Aug 2011 09:55)[Currently Displayed]

Actions (login required)