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Amorphous silicon solar cells made with SnO2:F TCO films deposited by atmospheric pressure CVD

Dagkaldiran, U, Gordijn, A, Finger, G, Yates, HM, Evans, P, Sheel, DW, Remes, Z and Vanecek, M 2009, 'Amorphous silicon solar cells made with SnO2:F TCO films deposited by atmospheric pressure CVD' , Materials Science and Engineering B, 159 , pp. 6-9.

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    Abstract

    In this paper we report the results of a study assessing a newly developed deposition process for Fdoped SnO2 films by CVD operating at atmospheric pressure (APCVD). The technology is designed to be compatible with industrial requirements such as high process speed, possible up-scaling to wide substrate widths and low costs. The optical and electrical properties of layers deposited on glass are found to be similar to those of commercially available lowpressure CVD. Optical absorptance below1% is achieved for films of around 0.8�mthick. Such transparent conductive oxide (TCO) is used with a-Si:H single junction p–i–n solar cells grown by PECVD. The cells are characterised by I–V measurements using AM1.5 spectra and by measuring the external quantum efficiencies (EQE). The initial efficiencies were up to 9.3% with FF = 73%. The TCO films demonstrated an enhanced performance in the EQE compared to commercially available TCO (Asahi-U).

    Item Type: Article
    Themes: Energy
    Schools: Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
    Journal or Publication Title: Materials Science and Engineering B
    Publisher: Elsevier
    Refereed: Yes
    ISSN: 0921-5107
    Depositing User: HM Yates
    Date Deposited: 21 Oct 2011 09:34
    Last Modified: 20 Aug 2013 18:15
    URI: http://usir.salford.ac.uk/id/eprint/18568

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