Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design
Tomic, S, Jones, T and Harrison, N 2008, 'Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design' , Applied Physics Letters, 93 (26) , p. 263105.
- Published Version
Download (206kB) | Preview
We present a theoretical study of the electronic and absorption properties of the intermediate band (IB) formed by a three dimensional structure of InAs/GaAs quantum dots (QDs) arranged in a periodic array. Analysis of the electronic and absorption structures suggests that the most promising design for an IB solar cell material, which will exhibit its own quasi-Fermi level, is to employ small QDs (~6–12 nm QD lateral size). The use of larger QDs leads to extension of the absorption spectra into a longer wavelength region but does not provide a separate IB in the forbidden energy gap.
Subjects outside of the University Themes
|Schools:||Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre|
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Depositing User:||Prof Stanko Tomic|
|Date Deposited:||25 Oct 2011 14:36|
|Last Modified:||18 Aug 2014 12:10|
Actions (login required)
|Edit record (repository staff only)|