Williams, R.S., McGee, W.M., Ashwin, M.J., Jones, T.S., Clarke, E, Stavrinou, P, Zhang, J, Tomic, S and Mulcahy, C.P.A. 2007, 'Wavelength control across the near IR spectrum with GaInNAs' , Applied Physics Letters, 90 (3) , 032109.

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Abstract

Accurate control of the photoluminescence (PL) emission wavelength over the range of 1.00–1.55 μm has been achieved using GaIn(N)As multiple quantum well (MQW) structures, grown by plasma-assisted molecular beam epitaxy. By limiting the In content to 30%, hence limiting the overall strain, wavelength-specific MQWs can be grown through simple control over the N content (0%–5%). High crystalline quality and compositional control are demonstrated using high-resolution x-ray diffraction, secondary-ion mass spectroscopy, PL, and subsequent comparison to theoretical calculations using a ten-band k∙p band-anticrossing model. The results reveal adherence to Vegard’s law over a larger compositional range for GaInNAs than GaNAs.

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