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Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory

Tomic, S 2006, 'Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory' , Physical Review B (PRB), 73 (12) , p. 125348.

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    Abstract

    We present a theoretical study of the electronic and optical properties of InGaAsN∕GaAs quantum dot structures. The calculations are based on a 10×10 k∙p band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. Numerical results for the model system of a capped pyramid-shaped quantum dot with {101} facets on a thin wetting layer are presented. Theoretical results show lowering of the fundamental optical transition on introduction of nitrogen. With appropriate tailoring of the indium and nitrogen concentration this system could be a potential candidate for 1.55 μm emission on a GaAs substrate.

    Item Type: Article
    Themes: Energy
    Schools: Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
    Journal or Publication Title: Physical Review B (PRB)
    Publisher: American Physical Society
    Refereed: Yes
    ISSN: 1098-0121
    Depositing User: Prof Stanko Tomic
    Date Deposited: 07 Nov 2011 12:20
    Last Modified: 20 Aug 2013 18:17
    URI: http://usir.salford.ac.uk/id/eprint/18888

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