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Influence of confinement energy and band anticrossing effect on the electron effective mass in Ga1−yInyNxAs1−x quantum wells

Tomic, S and O’Reilly, E 2005, 'Influence of confinement energy and band anticrossing effect on the electron effective mass in Ga1−yInyNxAs1−x quantum wells' , Physical Review B (PRB), 71 (23) , p. 233301.

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Abstract

We present a theoretical study of the electron effective mass in Ga1−yInyNxAs1−x∕GaAs quantum well (QW) structures. The calculations are based on a 10×10 k∙p band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. The results are tested by comparison with the experimentally determined electron effective mass in QWs with indium composition in the range between 10% and 50%, and nitrogen concentration between 1% and 5%. We report good agreement with experiment, confirming that the enhanced electron effective mass observed in the Ga1−yInyNxAs1−x QW structures considered can be fully accounted for using the band anticrossing model.

Item Type: Article
Themes: Energy
Schools: Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
Journal or Publication Title: Physical Review B (PRB)
Publisher: American Physical Society
Refereed: Yes
ISSN: 1098-0121
Depositing User: Prof Stanko Tomic
Date Deposited: 07 Nov 2011 12:22
Last Modified: 20 Aug 2013 17:17
URI: http://usir.eprints.org/id/eprint/18889

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