Skip to the content

Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies

Choulis, S, Hosea, T, Tomic, S, Kamal-Saadi, M, Adams, A, O’Reilly, E, Weinstein, B and Klar, P 2002, 'Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies' , Physical Review B, 66 (16) , p. 165321.

[img] PDF - Published Version
Restricted to Repository staff only

Download (126kB) | Request a copy

    Abstract

    We report photomodulated reflectance measurements of several intersubband transitions for a series of as-grown InyGa1-yAs1-xNx/GaAs multiple quantum well samples as functions of hydrostatic pressure (at room temperature) and temperature (at ambient pressure). The experimental results provide support for the effects of disorder due to different nearest-neighbor N-cation configurations. The quantum well transition energies obtained from the photomodulated reflectance spectra are fitted as a function of pressure with a realistic 10 band k⋅p Hamiltonian, that includes tight-binding-based energies and coupling parameters for the N levels. The quality of match between theory and experiment confirms the theoretical model and predicts some important material parameters for dilute-N InGaAsN alloys.

    Item Type: Article
    Themes: Energy
    Schools: Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
    Journal or Publication Title: Physical Review B
    Publisher: American Physical Society
    Refereed: Yes
    ISSN: 0163-1829
    Depositing User: Prof Stanko Tomic
    Date Deposited: 07 Nov 2011 12:27
    Last Modified: 20 Aug 2013 18:17
    URI: http://usir.salford.ac.uk/id/eprint/18892

    Document Downloads

    More statistics for this item...

    Actions (login required)

    Edit record (repository staff only)