Temporally resolved laser induced plasma diagnostics of single crystal silicon - effects of ambient pressure
Cowpe, JS, Astin, JS, Pilkington, RD and Hill, AE 2008, 'Temporally resolved laser induced plasma diagnostics of single crystal silicon - effects of ambient pressure' , Spectrochimica Acta Part B Atomic Spectroscopy, 63 , pp. 1066-1071.
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Laser-Induced Breakdown Spectroscopy of silicon was performed using a nanosecond pulsed frequency doubled Nd:YAG (532 nm) laser. The temporal evolution of the laser ablation plumes in air at atmospheric pressure and at an ambient pressure of ∼10−5 mbar is presented. Electron densities were determined from the Stark broadening of the Si (I) 288.16 nm emission line. Electron densities in the range of 6.91×1017 to 1.29×1019 cm−3 at atmospheric pressure and 1.68×1017 to 3.02×1019 cm−3 under vacuum were observed. Electron excitation temperatures were obtained from the line to continuum ratios and yielded temperatures in the range 7600–18,200 K at atmospheric pressure, and 8020–18,200 K under vacuum. The plasma morphology is also characterized with respect to time in both pressure regimes.
|Uncontrolled Keywords:||LIBS Laser ablation Plasma diagnostics Vacuum Silicon|
|Themes:||Subjects / Themes > Q Science > Q Science (General)|
Subjects / Themes > Q Science > QC Physics > QC350-467 Optics. Light
Subjects / Themes > Q Science > QC Physics
Subjects outside of the University Themes
|Schools:||Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre|
Colleges and Schools > College of Science & Technology
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
|Journal or Publication Title:||Spectrochimica Acta Part B Atomic Spectroscopy|
|Depositing User:||JS Cowpe|
|Date Deposited:||30 Nov 2009 10:39|
|Last Modified:||27 Sep 2011 12:16|
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