Cowpe, JS, Astin, JS, Pilkington, RD and Hill, AE 2008, 'Temporally resolved laser induced plasma diagnostics of single crystal silicon - effects of ambient pressure' , Spectrochimica Acta Part B Atomic Spectroscopy, 63 , pp. 1066-1071.

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Abstract

Laser-Induced Breakdown Spectroscopy of silicon was performed using a nanosecond pulsed frequency doubled Nd:YAG (532 nm) laser. The temporal evolution of the laser ablation plumes in air at atmospheric pressure and at an ambient pressure of ∼10−5 mbar is presented. Electron densities were determined from the Stark broadening of the Si (I) 288.16 nm emission line. Electron densities in the range of 6.91×1017 to 1.29×1019 cm−3 at atmospheric pressure and 1.68×1017 to 3.02×1019 cm−3 under vacuum were observed. Electron excitation temperatures were obtained from the line to continuum ratios and yielded temperatures in the range 7600–18,200 K at atmospheric pressure, and 8020–18,200 K under vacuum. The plasma morphology is also characterized with respect to time in both pressure regimes.

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