Cowpe, JS, Astin, JS, Pilkington, RD and Hill, AE 2008, 'Temporally resolved laser induced plasma diagnostics of single crystal silicon - effects of ambient pressure' , Spectrochimica Acta Part B Atomic Spectroscopy, 63 , pp. 1066-1071.
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Abstract
Laser-Induced Breakdown Spectroscopy of silicon was performed using a nanosecond pulsed frequency doubled Nd:YAG (532 nm) laser. The temporal evolution of the laser ablation plumes in air at atmospheric pressure and at an ambient pressure of ∼10−5 mbar is presented. Electron densities were determined from the Stark broadening of the Si (I) 288.16 nm emission line. Electron densities in the range of 6.91×1017 to 1.29×1019 cm−3 at atmospheric pressure and 1.68×1017 to 3.02×1019 cm−3 under vacuum were observed. Electron excitation temperatures were obtained from the line to continuum ratios and yielded temperatures in the range 7600–18,200 K at atmospheric pressure, and 8020–18,200 K under vacuum. The plasma morphology is also characterized with respect to time in both pressure regimes.
Item Type: | Article |
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Uncontrolled Keywords: | LIBS Laser ablation Plasma diagnostics Vacuum Silicon |
Themes: | Subjects / Themes > Q Science > Q Science (General) Subjects / Themes > Q Science > QC Physics > QC350-467 Optics. Light Subjects / Themes > Q Science > QC Physics Subjects outside of the University Themes |
Schools: | Schools > School of Computing, Science and Engineering Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre (SIRC) |
Journal or Publication Title: | Spectrochimica Acta Part B Atomic Spectroscopy |
Publisher: | Elsevier |
Refereed: | Yes |
ISSN: | 0584-8547 |
Depositing User: | JS Cowpe |
Date Deposited: | 30 Nov 2009 10:39 |
Last Modified: | 19 Apr 2018 03:30 |
URI: | http://usir.salford.ac.uk/id/eprint/2575 |
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