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Annealing of isolated amorphous zones in silicon

Donnelly, SE, Birtcher, RC, Vishnyakov, VM and Carter, G 2003, 'Annealing of isolated amorphous zones in silicon' , Applied Physics Letters, 82 (12) , pp. 1860-1862.

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    Abstract

    In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.

    Item Type: Article
    Uncontrolled Keywords: silicon, recrystallisation annealing, amorphous semiconductors, elemental semiconductors, ion beam effects, transmission electron microscopy, ion implantation
    Themes: Subjects / Themes > Q Science > QD Chemistry
    Subjects / Themes > Q Science > QC Physics
    Subjects outside of the University Themes
    Schools: Colleges and Schools > College of Science & Technology
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
    Journal or Publication Title: Applied Physics Letters
    Publisher: American Institute of Physics
    Refereed: Yes
    ISSN: 00036951
    Depositing User: H Kenna
    Date Deposited: 22 Aug 2007 15:11
    Last Modified: 20 Aug 2013 16:46
    URI: http://usir.salford.ac.uk/id/eprint/314

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