Donnelly, SE, Birtcher, RC, Vishnyakov, VM and Carter, G 2003, 'Annealing of isolated amorphous zones in silicon' , Applied Physics Letters, 82 (12) , pp. 1860-1862.
In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.
|Uncontrolled Keywords:||silicon, recrystallisation annealing, amorphous semiconductors, elemental semiconductors, ion beam effects, transmission electron microscopy, ion implantation|
|Themes:||Subjects / Themes > Q Science > QD Chemistry
Subjects / Themes > Q Science > QC Physics
Subjects outside of the University Themes
|Schools:||Schools > School of Computing, Science and Engineering
Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre (SIRC)
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Depositing User:||H Kenna|
|Date Deposited:||22 Aug 2007 14:11|
|Last Modified:||01 Dec 2015 00:03|
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