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Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices: effects on dc electrical characteristics

Terry, J, Haworth, LI, Gundlach, AM, Stevenson, JTM, Vishnyakov, VM and Donnelly, SE 2002, 'Incorporation of helium-implant-induced cavities near the active regions of metal-oxide-semiconductor devices: effects on dc electrical characteristics' , Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 20 (1) , pp. 306-310.

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Abstract

Cavities, formed by helium implantation and subsequent annealing, have proved to be effective at trapping metal impurities within silicon. This has led to interest in their use as proximity gettering sites. In this investigation, cavity populations were formed by helium implants of energy 40 keV and dose 5×1016 cm–2 followed by annealing at 900 °C. This regime produces cavities with a mean void radius of 20 nm, located between 100 and 350 nm below the silicon surface. The effect of the presence of such cavities near the active areas of 1.2 µm p-type metal–oxide–semiconductor field-effect transistor devices is described. Electrical characterization of wafers, which have been implanted with helium on the front or rear silicon surface, has been carried out to determine whether the inclusion of void populations near the active regions of silicon devices is detrimental. These measurements found no evidence of any detrimental effect on the performance of working devices.

Item Type: Article
Themes: Subjects / Themes > Q Science > QD Chemistry
Subjects / Themes > Q Science > QC Physics
Subjects outside of the University Themes
Schools: Colleges and Schools > College of Science & Technology
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
Journal or Publication Title: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Publisher: American Vacuum Society
Refereed: Yes
ISSN: 0734211X
Depositing User: H Kenna
Date Deposited: 22 Aug 2007 15:25
Last Modified: 20 Aug 2013 16:46
URI: http://usir.salford.ac.uk/id/eprint/315

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