Park, SK, Kanjolia, R, Anthis, J, Odedra, R, Boag, NM, Wielunski, L and Chabal, YJ 2010, 'Atomic layer deposition of Ru/RuO2Thin films studied by in situ infrared spectroscopy' , Chemistry of Materials, 22 (17) , pp. 4867-4878.
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The deposition of ruthenium thin films is investigated using a newly synthesized precursor (cyclopentadienyl ethylruthenium dicarbonyl, Ru(Cp)(CO)2 Et) and O2 gas as reactants. The conditions to achieve self-terminated surface reactions (sample temperature, precursor pulse length and precursor gas pressure) are investigated and the resulting composition, conductivity, and surface morphology are determined during/after deposition on hydrogen-terminated silicon (111) surfaces using in situ FTIR, and ex situ Rutherford back scattering, X-ray photoelectron spectroscopy, and atomic force microscopy. Higher growth rates (∼1.5-3 A˚ ) are obtained compared to those typical of ALD of metals (∼0.5-1 A˚ ), under conditions of saturation, i.e., through self-terminated surface reactions. Infrared absorption measurements reveal that bridged CO formed by the self-reaction of Ru(Cp)(CO)2 Et leads to surface passivation, thus terminating the precursor self-reaction. They also show that, under these “saturation” growth conditions, metallic Ru develops during the early stage of deposition (1-5 cycles), and RuO2 is observed later in the growth. The deposition rate is linear with cycles after an initially slow nucleation stage and the film becomes metallic after∼22 cycles. Thick films (∼45 nm) grown with short pulses produce metallic polycrystalline ruthenium with hcp structure.
|Schools:||Schools > School of Computing, Science and Engineering|
|Journal or Publication Title:||Chemistry of Materials|
|Funders:||Funder not known|
|Depositing User:||Institutional Repository|
|Date Deposited:||06 Nov 2014 00:24|
|Last Modified:||05 Apr 2016 18:16|
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