Photofragmentation of thecloso-Carboranes Part II: VUV Assisted Dehydrogenation in thecloso-Carboranes and Semiconducting B10C2HxFilms
Rühl, E, Riehs, NF, Behera, S, Wilks, J, Liu, J, Jochims, HW, Caruso, AN, Boag, NM, Kelber, J A and Dowben, P A 2010, 'Photofragmentation of thecloso-Carboranes Part II: VUV Assisted Dehydrogenation in thecloso-Carboranes and Semiconducting B10C2HxFilms' , The Journal of Physical Chemistry A, 114 (27) , pp. 7284-7291.
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The dehydrogenation of semiconducting boron carbide (B10C2 Hx) ﬁlms as well as the three closo-carborane isomers of dicarbadodecaborane (C2 B10H12) and two isomers of the corresponding closo-phosphacarborane (PCB10H11) all appear to be very similar. Photoionization mass spectrometry studies at near-threshold gas phase photoionization indicate that the preferred pathway for dissociation of the parent cation species (C2 B10H10 + or PCB10H9 +) is, in all cases, the loss of H2. Ab initio density functional theory (DFT) calculations indicate that energetically preferred sites for exopolyhedral hydrogen (B-H) bond dissociation are in all cases at B atoms opposite the C atoms in the parent cage molecule. The site of photodissociation of hydrogen from semiconducting boron carbide (B10C2 Hx) ﬁlms, fabricated by plasma-enhanced chemical vapor deposition, is a cage boron atom that can bond to nitrogen upon exposure to VUV light in the presence of NH3. Shifts in core level binding energies due to nitrogen bond formation indicate that B-N bond formation occurs only at B atoms bound to other boron atoms (B-B sites) and not at B-C sites or at C sites, in agreement with gas phase results.
|Schools:||Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre (SIRC)|
|Journal or Publication Title:||The Journal of Physical Chemistry A|
|Funders:||Funder not known|
|Depositing User:||Institutional Repository|
|Date Deposited:||07 Nov 2014 12:01|
|Last Modified:||29 Oct 2015 00:11|
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