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Photonic crystal thin films of GaAs prepared by atomic layer deposition

Povey, IM, Whitehead, DE, Thomas, K, Pemble, ME, Bardosova, M and Renard, J 2006, 'Photonic crystal thin films of GaAs prepared by atomic layer deposition' , Applied Physics Letters, 89 (10) , p. 104103.

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    Abstract

    Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

    Item Type: Article
    Uncontrolled Keywords: Gallium arsenide, III-V semiconductors, semiconductor thin films, photonic crystals, atomic layer deposition, self-assembly, etching, reflectivity, photonic band gap, refractive index
    Themes: Subjects / Themes > Q Science > QC Physics
    Subjects outside of the University Themes
    Schools: Colleges and Schools > College of Science & Technology
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
    Journal or Publication Title: Applied Physics Letters
    Publisher: American Institute of Physics
    Refereed: Yes
    ISSN: 00036951
    Related URLs:
    Depositing User: H Kenna
    Date Deposited: 23 Aug 2007 11:43
    Last Modified: 20 Aug 2013 16:47
    URI: http://usir.salford.ac.uk/id/eprint/331

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