Photonic crystal thin films of GaAs prepared by atomic layer deposition
Povey, IM, Whitehead, DE, Thomas, K, Pemble, ME, Bardosova, M and Renard, J 2006, 'Photonic crystal thin films of GaAs prepared by atomic layer deposition' , Applied Physics Letters, 89 (10) , p. 104103.Full text not available from this repository. (Request a copy)
Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.
|Uncontrolled Keywords:||Gallium arsenide, III-V semiconductors, semiconductor thin films, photonic crystals, atomic layer deposition, self-assembly, etching, reflectivity, photonic band gap, refractive index|
|Themes:||?? QC ??
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|Schools:||?? fac_see ??
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|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Depositing User:||Users 4 not found.|
|Date Deposited:||23 Aug 2007 10:43|
|Last Modified:||20 Aug 2013 15:47|
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