Skip to the content

Effects of D+ implantation of CIGS thin films through a CdS layer

Yakushev, MV, Martin, RW, Krustok, J, Mudriy, AV, Holman, D, Schock, HW, Pilkington, RD, Hill, AE and Tomlinson, RD 2001, 'Effects of D+ implantation of CIGS thin films through a CdS layer' , Thin Solid Films, 387 (1-2) , pp. 201-204.

Full text not available from this repository. (Request a copy)

Abstract

Cu(InGa)Se2 thin films coated with a 30 nm CdS layer were implanted with doses of 1014–1016 cm−2 of 2.5 keV D+ at room temperature. Implanted and non-implanted areas of the films were characterised using low-temperature photoluminescence (PL). A broad band (A) at 1.07 eV, attributed to the band-tail recombination, dominated the PL spectra from the non-implanted material. Implantation of D+ generated four new transitions in the PL spectra: 3 low-energy peaks; and a dominant peak at 1.10 eV. The blue shift of the 1.10 eV band with excitation power rise was shown to be only half that of band A. This was attributed to the passivating effects of D+ on the amplitude of the band-tail potential fluctuations.

Item Type: Article
Additional Information: DOI: 10.1016/S0040-6090(00)01730-2
Uncontrolled Keywords: Thin films; CIGS/CdS; Photoluminescence; Ion-implantation
Themes: Subjects / Themes > Q Science > QD Chemistry
Subjects / Themes > Q Science > QC Physics
Subjects outside of the University Themes
Schools: Colleges and Schools > College of Science & Technology
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
Journal or Publication Title: Thin Solid Films
Publisher: Elsevier
Refereed: Yes
ISSN: 00406090
Depositing User: H Kenna
Date Deposited: 23 Aug 2007 14:24
Last Modified: 20 Aug 2013 16:47
URI: http://usir.salford.ac.uk/id/eprint/348

Actions (login required)

Edit record (repository staff only)