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Methods of forming thin metal-containing films by chemical phase deposition

Konjolia, Ravi; Odedra, Rajesh; Boag, Neil; Weyburne, David 2007, Methods of forming thin metal-containing films by chemical phase deposition , US8481121.

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Abstract

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C.sub.10-alkyl; X is C.sub.1-C.sub.10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Item Type: Patent
Schools: Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre (SIRC)
Funders: Sigma Aldrich HiTech
Depositing User: NM Boag
Date Deposited: 31 Jul 2015 16:11
Last Modified: 29 Oct 2015 00:10
URI: http://usir.salford.ac.uk/id/eprint/35296

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