Rectifying "nanohomo" contacts of W-Ga-C composite pad and nanowire fabricated by focused-ion-beam induced chemical vapour deposition
Li, W and Shen, T 2005, 'Rectifying "nanohomo" contacts of W-Ga-C composite pad and nanowire fabricated by focused-ion-beam induced chemical vapour deposition' , Applied Physics Letters, 87 (12) , p. 123113.
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We prepared W-Ga-C composite contacts on W-Ga-C composite nanowires by focused-ion-beam-induced chemical vapor deposition using a dual-beam scanning electron microscope/focused-ion-beam system. The current-voltage (I-V) characteristics of wires were found to change from nonlinear to linear with increasing wire thickness. For wires with small dimensions, which result in strong nonlinear I-V behavior at room temperature, pairs of contacts were fabricated along the wire under different ion energies and scanning modes. Nonlinear and asymmetric rectifying I-V characteristics were observed. The results suggest that nanoscaled W-Ga-C nanowires may behave similarly to semiconductors and that the contact characteristics may be modified using different deposition conditions. Furthermore, ohmiclike junctions could be formed through the use of specific deposition conditions for the contact pads and nanowires.
|Uncontrolled Keywords:||Tungsten compounds, gallium compounds, composite materials, rectification, nanowires, focused ion beam technology, chemical vapour deposition, electrical contacts, scanning electron microscopy|
|Themes:||Subjects / Themes > Q Science > QC Physics|
Subjects outside of the University Themes
|Schools:||Colleges and Schools > College of Science & Technology|
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Depositing User:||H Kenna|
|Date Deposited:||23 Aug 2007 15:32|
|Last Modified:||27 Sep 2011 12:22|
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