Skip to the content

Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F

Werner, M, van den Berg, JA, Armour, DG, Carter, G, Feudel, T, Herden, M, Bersani, M, Giubertoni, D, Ottaviano, L, Bongiorno, C, Mannino, G, Bailey, P and Noakes, TCQ 2005, 'Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F' , Applied Physics Letters, 86 (15) , p. 151904.

[img] PDF (Publisher version)
Download (131kB)

    Abstract

    Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130 °C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates.

    Item Type: Article
    Uncontrolled Keywords: Silicon, boron compounds, xenon, elemental semiconductors, amorphous semiconductors, ion implantation, ion-surface impact, annealing, secondary ion mass spectra, transmission electron microscopy, impurity distribution
    Themes: Subjects / Themes > Q Science > QC Physics
    Subjects outside of the University Themes
    Schools: Colleges and Schools > College of Science & Technology
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
    Journal or Publication Title: Applied Physics Letters
    Publisher: American Institute of Physics
    Refereed: Yes
    ISSN: 00036951
    Related URLs:
    Depositing User: H Kenna
    Date Deposited: 23 Aug 2007 16:49
    Last Modified: 20 Aug 2013 16:47
    URI: http://usir.salford.ac.uk/id/eprint/357

    Document Downloads

    More statistics for this item...

    Actions (login required)

    Edit record (repository staff only)