van den Berg, JA, Carter, G, Armour, DG, Werner, M, Goldberg, RD, Collart, EHJ, Bailey, P and Noakes, TCQ 2004, 'Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship' , Applied Physics Letters, 85 (15) , pp. 3074-3076.
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Damage distributions resulting from 0.1-2 keV B+ implantation at room temperature into Si(100) to doses ranging from 1×1014 to 2×1016 cm-2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B+ doses and energies investigated a 3-4 nm deep, near-surface damage peak was observed while for energies at and above 1 keV, a second damage peak developed beyond the mean projected B+ ion range of 5.3 nm. This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B+ ions is equal or greater than the modified Kinchin-Pease model predictions [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955); G. H. Kinchin and R. S. Pease, J. Nucl. Energy 1, 200 (1955); P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)].
|Uncontrolled Keywords:||Boron, silicon, elemental semiconductors, interstitials, ion implantation, annealing, ion-surface impact, ion recombination|
|Themes:||Subjects / Themes > Q Science > QC Physics
Subjects outside of the University Themes
|Schools:||Schools > School of Computing, Science and Engineering
Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre (SIRC)
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Depositing User:||H Kenna|
|Date Deposited:||24 Aug 2007 07:47|
|Last Modified:||01 Dec 2015 00:02|
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