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Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

van den Berg, JA, Carter, G, Armour, DG, Werner, M, Goldberg, RD, Collart, EHJ, Bailey, P and Noakes, TCQ 2004, 'Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship' , Applied Physics Letters, 85 (15) , pp. 3074-3076.

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    Abstract

    Damage distributions resulting from 0.1-2 keV B+ implantation at room temperature into Si(100) to doses ranging from 1×1014 to 2×1016 cm-2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B+ doses and energies investigated a 3-4 nm deep, near-surface damage peak was observed while for energies at and above 1 keV, a second damage peak developed beyond the mean projected B+ ion range of 5.3 nm. This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B+ ions is equal or greater than the modified Kinchin-Pease model predictions [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955); G. H. Kinchin and R. S. Pease, J. Nucl. Energy 1, 200 (1955); P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)].

    Item Type: Article
    Uncontrolled Keywords: Boron, silicon, elemental semiconductors, interstitials, ion implantation, annealing, ion-surface impact, ion recombination
    Themes: Subjects / Themes > Q Science > QC Physics
    Subjects outside of the University Themes
    Schools: Colleges and Schools > College of Science & Technology
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering
    Colleges and Schools > College of Science & Technology > School of Computing, Science and Engineering > Materials & Physics Research Centre
    Journal or Publication Title: Applied Physics Letters
    Publisher: American Institute of Physics
    Refereed: Yes
    ISSN: 00036951
    Related URLs:
    Depositing User: H Kenna
    Date Deposited: 24 Aug 2007 08:47
    Last Modified: 20 Aug 2013 16:47
    URI: http://usir.salford.ac.uk/id/eprint/358

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