Stabilization of boron carbide via silicon doping
Proctor, JE, Bhakhri, V, Hao, R, Prior, TJ, Scheler, T, Gregoryanz, E, Chhowalla, M and Giuliani, F 2015, 'Stabilization of boron carbide via silicon doping' , Journal of Physics: Condensed Matter, 27 (1) .
- Accepted Version
Download (2MB) | Preview
- Published Version
Restricted to Repository staff only
Download (2MB) | Request a copy
Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon-doping.
|Schools:||Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre (SIRC)|
|Journal or Publication Title:||Journal of Physics: Condensed Matter|
|Funders:||UK Centre for Defence Enterprise, Engineering & Physical Sciences Research Council (EPSRC)|
|Depositing User:||JE Proctor|
|Date Deposited:||31 Jul 2015 17:00|
|Last Modified:||05 Oct 2016 11:43|
Actions (login required)
|Edit record (repository staff only)|