An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry
Hughes, MA, Homewood, KP, Curry, RJ and Ohno, Y 2013, 'An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry' , Applied Physics Letters, 103 (13) , p. 133508.
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A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10−14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.
|Schools:||Schools > School of Computing, Science and Engineering|
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Depositing User:||Dr Mark Hughes|
|Date Deposited:||10 Nov 2015 09:30|
|Last Modified:||05 Apr 2016 19:36|
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