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Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

Hughes, MA, Lourenço, MA, Carey, JD, Murdin, B and Homewood, KP 2014, 'Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies' , Optics Express, 22 (24) , pp. 29292-29303.

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Abstract

We report the lattice site and symmetry of optically active Dy3+ and Tm3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Optics Express
Publisher: Optical Society of America
ISSN: 1094-4087
Related URLs:
Funders: Engineering and Physical Sciences Research Council (EPSRC)
Depositing User: Dr Mark Hughes
Date Deposited: 10 Nov 2015 10:12
Last Modified: 05 Apr 2016 19:36
URI: http://usir.salford.ac.uk/id/eprint/36966

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