Hughes, MA, Fedorenko, Y, Gholipour, B, Yao, J, Lee, TH, Gwilliam, RM, Homewood, KP, Hinder, S, Hewak, DW, Elliott, SR and Curry, RJ 2014, 'n-type chalcogenides by ion implantation' , Nature Communications, 5 , p. 5346.
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Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch¼S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (B5–11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
|Schools:||Schools > School of Computing, Science and Engineering|
|Journal or Publication Title:||Nature Communications|
|Publisher:||Nature Publishing Group|
|Funders:||Engineering and Physical Sciences Research Council (EPSRC)|
|Depositing User:||Dr Mark Hughes|
|Date Deposited:||10 Nov 2015 15:03|
|Last Modified:||05 Apr 2016 19:37|
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