Hughes, MA, Federenko, Y, Lee, TH, Yao, J, Gholipour, B, Gwilliam, RM, Homewood, KP, Hewak, DW, Elliott, SR and Curry, RJ 2014, 'Optical and electronic properties of bismuth-implanted glasses' , SPIE Proceedings: Optical Components and Materials XI, 8982 , p. 898216.
Restricted to Repository staff only
Download (541kB) | Request a copy
Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.
|Schools:||Schools > School of Computing, Science and Engineering|
|Journal or Publication Title:||SPIE Proceedings: Optical Components and Materials XI|
|Funders:||Engineering and Physical Sciences Research Council (EPSRC)|
|Depositing User:||Dr Mark Hughes|
|Date Deposited:||10 Nov 2015 15:30|
|Last Modified:||13 Jan 2016 12:07|
Actions (login required)
|Edit record (repository staff only)|