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Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors

Pal, J, Tse, G, Haxha, V, Migliorato, MA and Tomic, S 2012, 'Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors' , Journal of Physics: Conference Series, 367 , 012006.

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Abstract

The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Journal of Physics: Conference Series
Publisher: IOP Publishing
ISSN: 1742-6596
Funders: EPSRC
Depositing User: Prof Stanko Tomic
Date Deposited: 06 Apr 2016 08:39
Last Modified: 06 Apr 2016 08:39
URI: http://usir.salford.ac.uk/id/eprint/38606

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