Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors
Pal, J, Tse, G, Haxha, V, Migliorato, MA and Tomic, S 2012, 'Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors' , Journal of Physics: Conference Series, 367 , 012006.
- Published Version
Restricted to Repository staff only
Download (521kB) | Request a copy
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.
|Schools:||Schools > School of Computing, Science and Engineering|
|Journal or Publication Title:||Journal of Physics: Conference Series|
|Depositing User:||Prof Stanko Tomic|
|Date Deposited:||06 Apr 2016 08:39|
|Last Modified:||06 Apr 2016 08:39|
Actions (login required)
|Edit record (repository staff only)|