Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

Tomic, S ORCID: https://orcid.org/0000-0003-3622-6960, Jones, T and Harrison, N 2008, 'Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design' , Applied Physics Letters, 93 (26) , p. 263105.

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Abstract

We present a theoretical study of the electronic and absorption properties of the intermediate band (IB) formed by a three dimensional structure of InAs/GaAs quantum dots (QDs) arranged in a periodic array. Analysis of the electronic and absorption structures suggests that the most promising design for an IB solar cell material, which will exhibit its own quasi-Fermi level, is to employ small QDs (~6–12 nm QD lateral size). The use of larger QDs leads to extension of the absorption spectra into a longer wavelength region but does not provide a separate IB in the forbidden energy gap.

Item Type:	Article
Themes:	Energy Subjects outside of the University Themes
Schools:	Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre
Journal or Publication Title:	Applied Physics Letters
Publisher:	AIP Publishing
Refereed:	Yes
ISSN:	0003-6951
Depositing User:	Prof Stanko Tomic
Date Deposited:	25 Oct 2011 14:36
Last Modified:	21 Dec 2018 01:20
URI:	http://usir.salford.ac.uk/id/eprint/18645

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