Williams, R.S., McGee, W.M., Ashwin, M.J., Jones, T.S., Clarke, E, Stavrinou, P, Zhang, J, Tomic, S ORCID: https://orcid.org/0000-0003-3622-6960 and Mulcahy, C.P.A.
2007,
'Wavelength control across the near IR spectrum with GaInNAs'
, Applied Physics Letters, 90 (3)
, 032109.
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Abstract
Accurate control of the photoluminescence (PL) emission wavelength over the range of 1.00–1.55 μm has been achieved using GaIn(N)As multiple quantum well (MQW) structures, grown by plasma-assisted molecular beam epitaxy. By limiting the In content to 30%, hence limiting the overall strain, wavelength-specific MQWs can be grown through simple control over the N content (0%–5%). High crystalline quality and compositional control are demonstrated using high-resolution x-ray diffraction, secondary-ion mass spectroscopy, PL, and subsequent comparison to theoretical calculations using a ten-band k∙p band-anticrossing model. The results reveal adherence to Vegard’s law over a larger compositional range for GaInNAs than GaNAs.
Item Type: | Article |
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Themes: | Energy Subjects outside of the University Themes |
Schools: | Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre |
Journal or Publication Title: | Applied Physics Letters |
Publisher: | AIP Publishing |
Refereed: | Yes |
ISSN: | 0003-6951 |
Depositing User: | Prof Stanko Tomic |
Date Deposited: | 25 Oct 2011 14:43 |
Last Modified: | 21 Dec 2018 04:17 |
URI: | http://usir.salford.ac.uk/id/eprint/18650 |
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