Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory

Tomic, S ORCID: https://orcid.org/0000-0003-3622-6960 2006, 'Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory' , Physical Review B (PRB), 73 (12) , p. 125348.

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We present a theoretical study of the electronic and optical properties of InGaAsN∕GaAs quantum dot structures. The calculations are based on a 10×10 k∙p band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. Numerical results for the model system of a capped pyramid-shaped quantum dot with {101} facets on a thin wetting layer are presented. Theoretical results show lowering of the fundamental optical transition on introduction of nitrogen. With appropriate tailoring of the indium and nitrogen concentration this system could be a potential candidate for 1.55 μm emission on a GaAs substrate.

Item Type: Article
Themes: Energy
Schools: Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre
Journal or Publication Title: Physical Review B (PRB)
Publisher: American Physical Society
Refereed: Yes
ISSN: 1098-0121
Depositing User: Prof Stanko Tomic
Date Deposited: 07 Nov 2011 12:20
Last Modified: 16 Feb 2022 13:32
URI: http://usir.salford.ac.uk/id/eprint/18888

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