Donnelly, SE, Birtcher, RC, Vishnyakov, VM and Carter, G 2003, 'Annealing of isolated amorphous zones in silicon' , Applied Physics Letters, 82 (12) , pp. 1860-1862.
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Abstract
In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.
Item Type: | Article |
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Themes: | Subjects / Themes > Q Science > QD Chemistry Subjects / Themes > Q Science > QC Physics Subjects outside of the University Themes |
Schools: | Schools > School of Computing, Science and Engineering Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre |
Journal or Publication Title: | Applied Physics Letters |
Publisher: | AIP Publishing |
Refereed: | Yes |
ISSN: | 00036951 |
Depositing User: | H Kenna |
Date Deposited: | 22 Aug 2007 14:11 |
Last Modified: | 16 Feb 2022 07:36 |
URI: | http://usir.salford.ac.uk/id/eprint/314 |
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