Photonic crystal thin films of GaAs prepared by atomic layer deposition

Povey, IM, Whitehead, DE, Thomas, K, Pemble, ME, Bardosova, M and Renard, J 2006, 'Photonic crystal thin films of GaAs prepared by atomic layer deposition' , Applied Physics Letters, 89 (10) , p. 104103.

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Abstract

Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

Item Type:	Article
Themes:	Subjects / Themes > Q Science > QC Physics Subjects outside of the University Themes
Schools:	Schools > School of Computing, Science and Engineering
Journal or Publication Title:	Applied Physics Letters
Publisher:	AIP Publishing
Refereed:	Yes
ISSN:	00036951
Related URLs:	Publisher Publisher
Depositing User:	H Kenna
Date Deposited:	23 Aug 2007 10:43
Last Modified:	16 Feb 2022 07:37
URI:	https://usir.salford.ac.uk/id/eprint/331

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