Organometallic precursors for use in chemical phase deposition processes

Kanjolia, Ravi; Odedra, Rajesh; Boag, Neil 2007, Organometallic precursors for use in chemical phase deposition processes , US8476467.

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Abstract

An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R).sub.nM(CO).sub.2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C.sub.1-C.sub.10-alkyl; X is C.sub.1-C.sub.10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD.

Item Type:	Patent
Schools:	Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre
Funders:	Sigma Aldrich HiTech
Depositing User:	NM Boag
Date Deposited:	31 Jul 2015 16:11
Last Modified:	29 Oct 2015 00:10
URI:	http://usir.salford.ac.uk/id/eprint/35295

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