Stabilization of boron carbide via silicon doping

Proctor, JE ORCID:, Bhakhri, V, Hao, R, Prior, TJ, Scheler, T, Gregoryanz, E, Chhowalla, M and Giuliani, F 2015, 'Stabilization of boron carbide via silicon doping' , Journal of Physics: Condensed Matter, 27 (1) , 015401.

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Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon-doping.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre
Journal or Publication Title: Journal of Physics: Condensed Matter
Publisher: IOP Publishing
Refereed: Yes
ISSN: 0953-8984
Related URLs:
Funders: UK Centre for Defence Enterprise, Engineering & Physical Sciences Research Council (EPSRC)
Depositing User: JE Proctor
Date Deposited: 31 Jul 2015 17:00
Last Modified: 28 Aug 2021 18:18

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