Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry

Hughes, MA ORCID: https://orcid.org/0000-0002-0877-5279, Homewood, KP, Curry, RJ, Ohno, Y and Mizutani, T 2014, 'Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry' , Materials Research Express, 1 (2) , 026304.

PDF (Uncorrected proof) - Published Version Restricted to Repository staff only Download (613kB) | Request a copy

Abstract

We fabricated a Ti/Pd asymmetrically contacted single carbon nanotube (CNT) field-effect transistor (FET) with split-gates. Transfer characteristics can be explained if the Schottky barrier for electrons is lower at the Pd contact than it is at the Ti contact. Strong rectification is observed when the gates are unbiased, and the rectification direction can be inverted with the appropriate gate bias. When operated as an FET the device has an on/off ratio of 1 × 107. Under illumination, photocurrent can only be observed with opposite split-gate bias. Open circuit voltage (VOC) and short circuit current (ISC) increase with increasing opposite polarity split-gate bias, representing the first demonstration of the modulation of VOC and ISC in an asymmetric contact CNT FET.

Item Type:	Article
Schools:	Schools > School of Computing, Science and Engineering
Journal or Publication Title:	Materials Research Express
Publisher:	IOP Publishing
Related URLs:	Publication
Funders:	MEXT
Depositing User:	Dr Mark Hughes
Date Deposited:	10 Nov 2015 15:44
Last Modified:	18 Nov 2019 14:45
URI:	http://usir.salford.ac.uk/id/eprint/37005

Actions (login required)

Edit record (repository staff only)