Pal, J, Tse, G, Haxha, V, Migliorato, MA and Tomic, S 2012, 'Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors' , Journal of Physics: Conference Series, 367 , 012006.
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Official URL: http://dx.doi.org/10.1088/1742-6596/367/1/012006
Abstract
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.
Item Type: | Article |
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Schools: | Schools > School of Computing, Science and Engineering |
Journal or Publication Title: | Journal of Physics: Conference Series |
Publisher: | IOP Publishing |
ISSN: | 1742-6596 |
Funders: | EPSRC |
Depositing User: | Prof Stanko Tomic |
Date Deposited: | 06 Apr 2016 08:39 |
Last Modified: | 09 Aug 2017 01:33 |
URI: | http://usir.salford.ac.uk/id/eprint/38606 |
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