Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors

Pal, J, Tse, G, Haxha, V, Migliorato, MA and Tomic, S ORCID: https://orcid.org/0000-0003-3622-6960 2012, 'Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors' , Journal of Physics: Conference Series, 367 , 012006.

PDF - Published Version Restricted to Repository staff only Download (521kB) | Request a copy

Abstract

The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.

Item Type:	Article
Schools:	Schools > School of Computing, Science and Engineering
Journal or Publication Title:	Journal of Physics: Conference Series
Publisher:	IOP Publishing
ISSN:	1742-6596
Funders:	EPSRC
Depositing User:	Prof Stanko Tomic
Date Deposited:	06 Apr 2016 08:39
Last Modified:	16 Feb 2022 17:40
URI:	http://usir.salford.ac.uk/id/eprint/38606

Actions (login required)

Edit record (repository staff only)