Donnelly, SE, Hinks, JA, Edmondson, PD, Pilkington, RD, Yakushev, MV and Birtcher, RC 2006, 'In situ transmission electron microscopy studies of radiation damage in copper indium diselenide' , Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1-2) , pp. 686-689.
Full text not available from this repository. (Request a copy)Abstract
The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importance for photovoltaic applications in outer space where the lifetime of CIS-based solar cells has been found to be at least 50 times that of those based on amorphous silicon. In this paper we report on studies of the build-up of radiation damage in CIS during irradiation with Xe ions in the energy range 100–400 keV. Room temperature experiments indicate that dynamic annealing processes prevent the build-up of high levels of damage. However, for irradiation at a temperature of 50 K, the behaviour changes drastically with the material amorphising at low fluences. This effect is discussed in terms of defect mobility.
| Item Type: | Article |
|---|---|
| Themes: | Subjects / Themes > Q Science > QC Physics Subjects outside of the University Themes |
| Schools: | Schools > School of Computing, Science and Engineering Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre |
| Journal or Publication Title: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| Publisher: | Elsevier |
| Refereed: | Yes |
| ISSN: | 0168583X |
| Depositing User: | H Kenna |
| Date Deposited: | 07 Sep 2007 08:45 |
| Last Modified: | 27 Aug 2021 22:00 |
| URI: | https://usir.salford.ac.uk/id/eprint/402 |
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