High speed chalcogenide glass electrochemical metallization cells with various active metals

Hughes, MA ORCID: https://orcid.org/0000-0002-0877-5279, Burgess, A, Hinder, S, Gholizadeh, A ORCID: https://orcid.org/0000-0002-1144-3144, Craig, C and Hewak, DW 2018, 'High speed chalcogenide glass electrochemical metallization cells with various active metals' , Nanotechnology, 29 (31) , #315202.

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Abstract

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent and repeatable resistive switching behaviour, and had a retention of 3 and >43 days, respectively; both had switching speeds of < 5 ns. Devices with Cr and Fe active metals displayed incomplete or intermittent resistive switching, and devices with Mo and Al active electrodes displayed no resistive switching ability. Deeper penetration of the active metal into the GaLaSO layer resulted in greater resistive switching ability of the cell. The off-state resistivity was greater for more reactive active metals which may be due to a thicker intermediate layer.

Item Type: Article
Uncontrolled Keywords: chalcogenide, memory, metallization, resistive switching
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Nanotechnology
Publisher: IOP Publishing
ISSN: 1361-6528
Related URLs:
Funders: Engineering and Physical Sciences Research Council (EPSRC)
SWORD Depositor: Publications Router
Depositing User: Publications Router
Date Deposited: 25 May 2018 08:41
Last Modified: 14 May 2019 08:00
URI: http://usir.salford.ac.uk/id/eprint/47104

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