The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon

Peach, T, Homewood, K, Lourenco, M, Hughes, MA ORCID: https://orcid.org/0000-0002-0877-5279, Saeedi, K, Stavrias, N, Li, J, Chick, S, Murdin, B and Clowes, S 2018, 'The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon' , Advanced Quantum Technologies, 1 (2) , p. 1800038.

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Abstract

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, photoluminescence is observed in implanted samples which have been annealed at 700°C relating to the presence of a dense layer of lattice defects that is formed during the implantation process. Hall measurments at 10K show that this implant damage manifests itself at low temperatures as an abundance of p‐type charge carriers, the density of which is observed to have a strong dependence on annealing temperature. Using resonant D⁰X photoconductivity, we are able to identify the presence of a hyperfine structure in samples annealed at a minimum temperature of 800°C; however, higher temperatures are required to eliminate effects of implantation strain.

Item Type:	Article
Schools:	Schools > School of Computing, Science and Engineering
Journal or Publication Title:	Advanced Quantum Technologies
Publisher:	Wiley
ISSN:	2511-9044
Related URLs:	Publisher
Funders:	Engineering and Physical Sciences Research Council
SWORD Depositor:	Publications Router
Depositing User:	Publications Router
Date Deposited:	11 Sep 2018 07:51
Last Modified:	15 Feb 2022 23:27
URI:	https://usir.salford.ac.uk/id/eprint/47697

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