Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs

Litvinenko, KL, Leontiadou, M ORCID: https://orcid.org/0000-0003-2616-1841, Li, J, Clowes, SK, Emeny, MT, Ashley, T, Pidgeon, CR, Cohen, LF and Murdin, BN 2010, 'Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs' , Applied Physics Letters, 96 (11) , p. 111107.

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Abstract

Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate (<4 T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D'yakonov-Perel' dephasing process is suppressed. At the high field limit the Elliot-Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Applied Physics Letters
Publisher: AIP Publishing
ISSN: 0003-6951
Related URLs:
Funders: Engineering and Physical Sciences Research Council (EPSRC)
Depositing User: Dr MARINA LEONTIADOU
Date Deposited: 02 Apr 2019 08:52
Last Modified: 02 Apr 2019 08:52
URI: http://usir.salford.ac.uk/id/eprint/50840

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