Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells

Leontiadou, MA ORCID: https://orcid.org/0000-0003-2616-1841, Roble, AA, Patra, SK, Massabau, F, Fentrup, M, Dawson, P, Kappers, MJ, Oliver, RA, Graham, DM and Schulz, S 2019, 'Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells' , Scientific Reports, 9 (1) .

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Access Information: A Publisher Correction to this article can be found at https://doi.org/10.1038/s41598-020-62494-x (also in USIR: http://usir.salford.ac.uk/id/eprint/56790/)

Abstract

We report on a combined theoretical and experimental study of the impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN multi-quantum well systems. The presence of carrier localization effects in this system was demonstrated by experimental observations, such as the “S-shape” temperature dependence of the photoluminescence (PL) peak energy, and non-exponential PL decay curves that varied across the PL spectra at 10 K. A three-dimensional modified continuum model, coupled with a self-consistent Hartree scheme, was employed to gain insight into the electronic and optical properties of the experimentally studied c-plane GaN/AlGaN quantum wells. This model confirmed the existence of strong hole localization arising from the combined effects of the built-in polarization field along the growth direction and the alloy fluctuations at the quantum well/barrier interface. However, for electrons these localization effects are less pronounced in comparison to the holes. Furthermore, our calculations show that the attractive Coulomb interaction between electron and hole results in exciton localization. This behavior is in contrast to the picture of independently localized electrons and holes, often used to explain the radiative recombination process in c-plane InGaN/GaN quantum well systems.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Scientific Reports
Publisher: Nature Publishing Group
ISSN: 2045-2322
Related URLs:
Funders: Royal Society International Exchange Grant, Engineering and Physical Sciences Research Council (EPSRC), Science Foundation Ireland
Depositing User: Dr MARINA LEONTIADOU
Date Deposited: 28 Nov 2019 10:23
Last Modified: 07 Apr 2020 08:58
URI: http://usir.salford.ac.uk/id/eprint/53177

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