Hughes, MA 
ORCID: https://orcid.org/0000-0002-0877-5279, Panjwani, NA, Urdampilleta, M, Theodoropoulou, N, Wisby, I, Homewood, KP, Murdin, B, Lindström, T and Carey, JD
2021,
'Coupling of erbium-implanted silicon to a superconducting resonator'
, Physical Review Applied, 16 (3)
, 034006.
Access Information: © 2021 American Physical Society
Abstract
Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different
Er
centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When
Si
is coimplanted with
10
17
cm
−
3
Er
and
10
20
cm
−
3
O
ions, and the appropriate annealing process is used, one of these centers, which is present at higher
Er
concentrations, can be eliminated. Characterization of samples with
Er
concentrations of <
10
17
cm
−
3
is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC)
Nb
N
lumped-element resonator and a
10
17
cm
−
3
Er
-implanted
Si
sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration
Er
-implanted
Si
and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known
Er
-related EPR centers, only one trigonal center couples to the SC resonator.
Actions (login required)
 |
Edit record (repository staff only) |
Tools
Tools