Coupling of erbium-implanted silicon to a superconducting resonator

Hughes, MA ORCID:, Panjwani, NA, Urdampilleta, M, Theodoropoulou, N, Wisby, I, Homewood, KP, Murdin, B, Lindström, T and Carey, JD 2021, 'Coupling of erbium-implanted silicon to a superconducting resonator' , Physical Review Applied, 16 (3) , 034006.

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Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different Er centers are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When Si is coimplanted with 10 17 cm − 3 Er and 10 20 cm − 3 O ions, and the appropriate annealing process is used, one of these centers, which is present at higher Er concentrations, can be eliminated. Characterization of samples with Er concentrations of < 10 17 cm − 3 is limited by the sensitivity of standard electron paramagnetic resonance (EPR) instruments. The collective coupling strength between a superconducting (SC) Nb N lumped-element resonator and a 10 17 cm − 3 Er -implanted Si sample at 20 mK is measured to be about 1 MHz, which provides a basis for the characterization of low-concentration Er -implanted Si and for future networks of hybrid quantum systems that exchange quantum information over the telecommunication network. Of six known Er -related EPR centers, only one trigonal center couples to the SC resonator.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Physical Review Applied
Publisher: American Physical Society
ISSN: 2331-7019
Related URLs:
Funders: Engineering and Physical Sciences Research Council (EPSRC)
Depositing User: Dr Mark Hughes
Date Deposited: 21 Sep 2021 09:07
Last Modified: 15 Feb 2022 17:25

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