Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies

Choulis, S, Hosea, T, Tomic, S ORCID: https://orcid.org/0000-0003-3622-6960, Kamal-Saadi, M, Adams, A, O’Reilly, E, Weinstein, B and Klar, P 2002, 'Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies' , Physical Review B, 66 (16) , p. 165321.

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Abstract

We report photomodulated reflectance measurements of several intersubband transitions for a series of as-grown InyGa1-yAs1-xNx/GaAs multiple quantum well samples as functions of hydrostatic pressure (at room temperature) and temperature (at ambient pressure). The experimental results provide support for the effects of disorder due to different nearest-neighbor N-cation configurations. The quantum well transition energies obtained from the photomodulated reflectance spectra are fitted as a function of pressure with a realistic 10 band k⋅p Hamiltonian, that includes tight-binding-based energies and coupling parameters for the N levels. The quality of match between theory and experiment confirms the theoretical model and predicts some important material parameters for dilute-N InGaAsN alloys.

Item Type:	Article
Themes:	Energy
Schools:	Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre
Journal or Publication Title:	Physical Review B
Publisher:	American Physical Society
Refereed:	Yes
ISSN:	0163-1829
Depositing User:	Prof Stanko Tomic
Date Deposited:	07 Nov 2011 12:27
Last Modified:	16 Feb 2022 13:32
URI:	https://usir.salford.ac.uk/id/eprint/18892

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