n-type chalcogenides by ion implantation

Hughes, MA ORCID: https://orcid.org/0000-0002-0877-5279, Fedorenko, Y, Gholipour, B, Yao, J, Lee, TH, Gwilliam, RM, Homewood, KP, Hinder, S, Hewak, DW, Elliott, SR and Curry, RJ 2014, 'n-type chalcogenides by ion implantation' , Nature Communications, 5 , p. 5346.

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Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch¼S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (B5–11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering
Journal or Publication Title: Nature Communications
Publisher: Nature Publishing Group
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Funders: Engineering and Physical Sciences Research Council (EPSRC)
Depositing User: Dr Mark Hughes
Date Deposited: 10 Nov 2015 15:03
Last Modified: 15 Feb 2022 19:54
URI: https://usir.salford.ac.uk/id/eprint/37001

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