Hughes, MA 
ORCID: https://orcid.org/0000-0002-0877-5279, Fedorenko, Y, Gholipour, B, Yao, J, Lee, TH, Gwilliam, RM, Homewood, KP, Hinder, S, Hewak, DW, Elliott, SR and Curry, RJ
2014,
'n-type chalcogenides by ion implantation'
, Nature Communications, 5
, p. 5346.
Abstract
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite
for many electronic applications. Chalcogenide glasses are p-type semiconductors and their
applications have been limited by the extraordinary difficulty in obtaining n-type conductivity.
The ability to form chalcogenide glass p-n junctions could improve the performance of
phase-change memory and thermoelectric devices and allow the direct electronic control of
nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh
(Ch¼S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (B5–11
at.%), incorporated during high-temperature glass melting. Here we report the first n-type
doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous
films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device.
The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi
melt-doped GeCh glasses.
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