Spin echo from erbium implanted silicon

Hughes, MA ORCID: https://orcid.org/0000-0002-0877-5279, Panjwani, NA, Urdampilleta, M, Homewood, KP, Murdin, B and Carey, JD 2021, 'Spin echo from erbium implanted silicon' , Applied Physics Letters, 118 (19) , p. 194001.

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Access Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta, Kevin P. Homewood, Ben Murdin, and J. David Carey , "Spin echo from erbium implanted silicon", Applied Physics Letters 118, 194001 (2021) and may be found at https://doi.org/10.1063/5.0046904

Abstract

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3 × 1017 cm−3 and O to a concentration of 1020 cm−3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 μs and ∼1 ms, respectively, at 5 K. The spin echo decay profile displayed strong modulation, which was consistent with the super-hyperfine interaction between Er3+ and a spin bath of 29Si nuclei. The calculated spectral diffusion time was similar to the measured T2, which indicated that T2 was limited by spectral diffusion due to T1-induced flips of neighboring Er3+ spins. The origin of the echo is an Er center surrounded by six O atoms with monoclinic C1h site symmetry.

Item Type: Article
Schools: Schools > School of Computing, Science and Engineering > Salford Innovation Research Centre
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP) Publishing
ISSN: 0003-6951
Related URLs:
Funders: Engineering and Physical Sciences Research Council (EPSRC)
Depositing User: Dr Mark Hughes
Date Deposited: 12 May 2021 14:12
Last Modified: 12 May 2021 14:12
URI: http://usir.salford.ac.uk/id/eprint/60267

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